KSH44H11TF
- Mfr.Part #
- KSH44H11TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 80V 8A DPAK
- Stock
- 5,436
- In Stock :
- 5,436
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 80V
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- KSH44H11
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Collector Emitter Saturation Voltage :
- 1V
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- hFE Min :
- 60
- JESD-609 Code :
- e3
- Published :
- 2014
- Current Rating :
- 8A
- JEDEC-95 Code :
- TO-252AA
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 10μA
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1.75W
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Weight :
- 260.37mg
- Max Power Dissipation :
- 1.75W
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Pbfree Code :
- yes
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 50MHz
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 50MHz
- Frequency :
- 50MHz
- Factory Lead Time :
- 6 Weeks
- Mount :
- Surface Mount
- Max Collector Current :
- 8A
- Datasheets
- KSH44H11TF
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NPN 150°C TJ 10μA 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH44H11TF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 8A.In the part, the transition frequency is 50MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 8A volts can be achieved.
KSH44H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
KSH44H11TF Applications
There are a lot of ON Semiconductor
KSH44H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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