KSH45H11TF

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Mfr.Part #
KSH45H11TF
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 80V 8A DPAK
Stock
4,614
In Stock :
4,614

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
80V
Transistor Element Material :
SILICON
Base Part Number :
KSH45H11
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
RoHS Compliant
Voltage - Rated DC :
-80V
JESD-609 Code :
e3
Power Dissipation :
1.75W
Vce Saturation (Max) @ Ib, Ic :
1V @ 400mA, 8A
Current - Collector Cutoff (Max) :
10μA
Radiation Hardening :
No
ECCN Code :
EAR99
JESD-30 Code :
R-PSSO-G2
Pbfree Code :
yes
Transistor Type :
PNP
Factory Lead Time :
9 Weeks
Collector Emitter Voltage (VCEO) :
80V
Terminal Finish :
Tin (Sn)
Number of Elements :
1
Transition Frequency :
40MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
260.37mg
Packaging :
Tape and Reel (TR)
Max Power Dissipation :
1.75W
Collector Base Voltage (VCBO) :
-80V
Gain Bandwidth Product :
40MHz
Mounting Type :
Surface Mount
Transistor Application :
SWITCHING
Max Collector Current :
8A
Polarity/Channel Type :
PNP
Number of Terminations :
2
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 4A 1V
Terminal Form :
Gull wing
Max Breakdown Voltage :
80V
Element Configuration :
Single
Mount :
Surface Mount
Lead Free :
Lead Free
Collector Emitter Saturation Voltage :
-1V
hFE Min :
60
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Number of Pins :
3
Frequency :
40MHz
Operating Temperature :
150°C TJ
Current Rating :
-8A
Emitter Base Voltage (VEBO) :
-5V
Datasheets
KSH45H11TF
Introducing Transistors - Bipolar (BJT) - Single onsemi KSH45H11TF from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:KSH45H11, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, Operating Temperature:150°C TJ, KSH45H11TF pinout, KSH45H11TF datasheet PDF, KSH45H11TF amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSH45H11TF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSH45H11TF


PNP 150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

KSH45H11TF Overview


DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 8A volts.

KSH45H11TF Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz


KSH45H11TF Applications


There are a lot of ON Semiconductor
KSH45H11TF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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