KSC5502TU

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Mfr.Part #
KSC5502TU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 600V 2A TO220-3
Stock
17,301
In Stock :
17,301

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tube
Transistor Application :
SWITCHING
Base Part Number :
KSC5502
Weight :
1.8g
Height :
9.4mm
Transistor Element Material :
SILICON
Package / Case :
TO-220-3
Transistor Type :
NPN
Terminal Finish :
Tin (Sn)
Mount :
Through Hole
Factory Lead Time :
5 Weeks
Mounting Type :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
600V
JESD-609 Code :
e3
Polarity/Channel Type :
NPN
Published :
2013
Width :
4.83mm
DC Current Gain (hFE) (Min) @ Ic, Vce :
12 @ 500mA 2.5V
Collector Emitter Saturation Voltage :
3V
JEDEC-95 Code :
TO-220AB
Max Collector Current :
2A
Element Configuration :
Single
hFE Min :
12
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100μA
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 200mA, 1A
Max Power Dissipation :
50W
Number of Elements :
1
Collector Emitter Breakdown Voltage :
600V
Max Frequency :
1MHz
Emitter Base Voltage (VEBO) :
12V
Collector Base Voltage (VCBO) :
1.2kV
Operating Temperature :
150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Radiation Hardening :
No
Pbfree Code :
yes
Length :
10.67mm
Power Dissipation :
50W
Lead Free :
Lead Free
Number of Terminations :
3
Number of Pins :
3
Datasheets
KSC5502TU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5502TU from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:KSC5502, Package / Case:TO-220-3, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Terminations:3, Number of Pins:3, KSC5502TU pinout, KSC5502TU datasheet PDF, KSC5502TU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5502TU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5502TU


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5502TU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 12 @ 500mA 2.5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.

KSC5502TU Features


the DC current gain for this device is 12 @ 500mA 2.5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V


KSC5502TU Applications


There are a lot of ON Semiconductor
KSC5502TU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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