KSC5026MOS
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- Mfr.Part #
- KSC5026MOS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 1.5A TO126-3
- Stock
- 992
- In Stock ：
- 992
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power Dissipation :
- 20W
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 20W
- Package / Case :
- TO-225AA, TO-126-3
- Factory Lead Time :
- 7 Weeks
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Additional Feature :
- High Reliability
- Current Rating :
- 1.5A
- Collector Emitter Voltage (VCEO) :
- 800V
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 7V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Frequency :
- 15MHz
- hFE Min :
- 10
- Gain Bandwidth Product :
- 15MHz
- Collector Base Voltage (VCBO) :
- 1.1kV
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 150mA, 750mA
- Published :
- 2006
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 800V
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 100mA 5V
- Collector Emitter Saturation Voltage :
- 2V
- Voltage - Rated DC :
- 800V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Weight :
- 761mg
- Transition Frequency :
- 15MHz
- Datasheets
- KSC5026MOS
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
KSC5026MOS Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 150mA, 750mA.The emitter base voltage can be kept at 7V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 15MHz.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
KSC5026MOS Features
the DC current gain for this device is 20 @ 100mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 150mA, 750mA
the emitter base voltage is kept at 7V
the current rating of this device is 1.5A
a transition frequency of 15MHz
KSC5026MOS Applications
There are a lot of ON Semiconductor
KSC5026MOS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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