KSC5502TU
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- Mfr.Part #
- KSC5502TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 600V 2A TO220-3
- Stock
- 37,265
- In Stock ：
- 37,265
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Max Power Dissipation :
- 50W
- Power Dissipation :
- 50W
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 600V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 5 Weeks
- Transistor Type :
- NPN
- Length :
- 10.67mm
- Collector Base Voltage (VCBO) :
- 1.2kV
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 200mA, 1A
- Number of Terminations :
- 3
- Max Frequency :
- 1MHz
- Height :
- 9.4mm
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 3V
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- hFE Min :
- 12
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100μA
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Packaging :
- Tube
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 12 @ 500mA 2.5V
- Weight :
- 1.8g
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Base Part Number :
- KSC5502
- Published :
- 2013
- Collector Emitter Breakdown Voltage :
- 600V
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.83mm
- Datasheets
- KSC5502TU
NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC5502TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 12 @ 500mA 2.5V.The collector emitter saturation voltage is 3V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 12V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
KSC5502TU Features
the DC current gain for this device is 12 @ 500mA 2.5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
KSC5502TU Applications
There are a lot of ON Semiconductor
KSC5502TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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