KSC5502DTTU

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Mfr.Part #
KSC5502DTTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 600V 2A TO220-3
Stock
4,133
In Stock :
4,133

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 200mA, 1A
Collector Emitter Voltage (VCEO) :
600V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Polarity/Channel Type :
NPN
Emitter Base Voltage (VEBO) :
12V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
4 @ 1A 1V
Packaging :
Tube
JEDEC-95 Code :
TO-220AB
RoHS Status :
ROHS3 Compliant
Current - Collector Cutoff (Max) :
100μA
Transition Frequency :
11MHz
Base Part Number :
KSC5502
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Max Collector Current :
2A
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
600V
Weight :
1.8g
Collector Base Voltage (VCBO) :
1.2kV
Mount :
Through Hole
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Transistor Type :
NPN
JESD-609 Code :
e3
Qualification Status :
Not Qualified
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
HTS Code :
8541.29.00.95
Factory Lead Time :
2 Weeks
Number of Terminations :
3
Number of Pins :
3
hFE Min :
12
Current - Collector (Ic) (Max) :
2A
Pbfree Code :
yes
Operating Temperature :
150°C TJ
Package / Case :
TO-220-3
Max Power Dissipation :
50W
Gain Bandwidth Product :
11MHz
Published :
2013
ECCN Code :
EAR99
Datasheets
KSC5502DTTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5502DTTU from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:KSC5502, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3, KSC5502DTTU pinout, KSC5502DTTU datasheet PDF, KSC5502DTTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5502DTTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5502DTTU


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5502DTTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 4 @ 1A 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.Parts of this part have transition frequencies of 11MHz.During maximum operation, collector current can be as low as 2A volts.

KSC5502DTTU Features


the DC current gain for this device is 4 @ 1A 1V
the vce saturation(Max) is 1.5V @ 200mA, 1A
the emitter base voltage is kept at 12V
a transition frequency of 11MHz


KSC5502DTTU Applications


There are a lot of ON Semiconductor
KSC5502DTTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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