KSC5502DTM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 200mA, 1A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins :

3

Power Dissipation :

50W

Width :

6.22mm

Height :

2.39mm

Length :

6.73mm

Emitter Base Voltage (VEBO) :

12V

Mounting Type :

Surface Mount

Number of Elements :

1

REACH SVHC :

No SVHC

Collector Emitter Voltage (VCEO) :

600V

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

4 @ 1A 1V

Polarity/Channel Type :

NPN

Transistor Element Material :

SILICON

Published :

2014

Pbfree Code :

yes

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

310mV

Transistor Type :

NPN

Gain Bandwidth Product :

11MHz

JESD-30 Code :

R-PSSO-G2

hFE Min :

12

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Surface Mount

Transition Frequency :

11MHz

Frequency :

11MHz

Max Collector Current :

2A

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

600V

Current - Collector Cutoff (Max) :

100μA

Current Rating :

2A

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

600V

Weight :

260.37mg

Factory Lead Time :

6 Weeks

Transistor Application :

SWITCHING

Voltage - Rated DC :

600V

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

1.2kV

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

50W

ECCN Code :

EAR99

Number of Terminations :

2

Terminal Form :

Gull wing

Base Part Number :

KSC5502