KSC5338DTU

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Mfr.Part #
KSC5338DTU
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN 450V 5A TO220-3
Stock
10,856
In Stock :
10,856

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Weight :
1.8g
Factory Lead Time :
2 Weeks
Voltage - Rated DC :
450V
Emitter Base Voltage (VEBO) :
12V
Polarity/Channel Type :
NPN
Collector Emitter Saturation Voltage :
350mV
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 1A
Collector Emitter Breakdown Voltage :
450V
Frequency :
11MHz
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
100μA
Max Collector Current :
5A
Collector Emitter Voltage (VCEO) :
450V
Operating Temperature :
150°C TJ
Current Rating :
5A
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Lead Free :
Lead Free
Gain Bandwidth Product :
11MHz
JEDEC-95 Code :
TO-220AB
JESD-609 Code :
e3
Package / Case :
TO-220-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Published :
2010
Mount :
Through Hole
Power Dissipation :
75W
Packaging :
Tube
Number of Elements :
1
Number of Pins :
3
Max Power Dissipation :
75W
hFE Min :
6
Collector Base Voltage (VCBO) :
1kV
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
6 @ 2A 1V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transition Frequency :
11MHz
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
3
Datasheets
KSC5338DTU
Introducing Transistors - Bipolar (BJT) - Single onsemi KSC5338DTU from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Number of Terminations:3, KSC5338DTU pinout, KSC5338DTU datasheet PDF, KSC5338DTU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSC5338DTU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi KSC5338DTU


NPN 150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole

KSC5338DTU Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 6 @ 2A 1V.With a collector emitter saturation voltage of 350mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 1A.If the emitter base voltage is kept at 12V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 5A.A transition frequency of 11MHz is present in the part.Collector current can be as low as 5A volts at its maximum.

KSC5338DTU Features


the DC current gain for this device is 6 @ 2A 1V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 500mV @ 200mA, 1A
the emitter base voltage is kept at 12V
the current rating of this device is 5A
a transition frequency of 11MHz


KSC5338DTU Applications


There are a lot of ON Semiconductor
KSC5338DTU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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