KSC2383OTA
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- Mfr.Part #
- KSC2383OTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 1A TO92-3
- Stock
- 448
- In Stock ：
- 448
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Power Dissipation :
- 900mW
- Voltage - Rated DC :
- 160V
- Terminal Finish :
- Tin (Sn)
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 50mA, 500mA
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Max Power Dissipation :
- 900mW
- Collector Emitter Saturation Voltage :
- 1.5V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- hFE Min :
- 60
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 160V
- Collector Emitter Voltage (VCEO) :
- 160V
- Weight :
- 371.1027mg
- Packaging :
- Tape and Box (TB)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Breakdown Voltage :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 200mA 5V
- Max Breakdown Voltage :
- 160V
- Transition Frequency :
- 100MHz
- Base Part Number :
- KSC2383
- Current Rating :
- 1A
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Frequency :
- 100MHz
- Mounting Type :
- Through Hole
- Datasheets
- KSC2383OTA
,TO-226_straightlead.jpg)
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSC2383OTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 200mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 160V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
KSC2383OTA Features
the DC current gain for this device is 100 @ 200mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 100MHz
KSC2383OTA Applications
There are a lot of ON Semiconductor
KSC2383OTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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