KSC2073TU
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- Mfr.Part #
- KSC2073TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 150V 1.5A TO220-3
- Stock
- 1,238
- In Stock ：
- 1,238
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1.5A
- Gain Bandwidth Product :
- 4MHz
- Collector Emitter Breakdown Voltage :
- 150V
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Transition Frequency :
- 4MHz
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 150V
- Collector Base Voltage (VCBO) :
- 150V
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- Length :
- 9.2mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 4MHz
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Weight :
- 1.8g
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- Height :
- 14.2mm
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 25W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 500mA 10V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current Rating :
- 1.5A
- Packaging :
- Tube
- Max Power Dissipation :
- 25W
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 150V
- JEDEC-95 Code :
- TO-220AB
- Base Part Number :
- KSC2073
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- hFE Min :
- 40
- Pbfree Code :
- yes
- Width :
- 4.5mm
- Published :
- 2011
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Datasheets
- KSC2073TU
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
KSC2073TU Overview
In this device, the DC current gain is 40 @ 500mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1.5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
KSC2073TU Features
the DC current gain for this device is 40 @ 500mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 4MHz
KSC2073TU Applications
There are a lot of ON Semiconductor
KSC2073TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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