KSC1623GMTF
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- Mfr.Part #
- KSC1623GMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 100MA SOT23-3
- Stock
- 346
- In Stock ：
- 346
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 250MHz
- Collector Emitter Saturation Voltage :
- 150mV
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 50V
- Voltage - Rated DC :
- 50V
- Factory Lead Time :
- 13 Weeks
- Height :
- 970μm
- Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.3mm
- Operating Temperature :
- 150°C TJ
- Frequency :
- 250MHz
- Length :
- 2.9mm
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Current Rating :
- 100mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Part Number :
- KSC1623
- Qualification Status :
- Not Qualified
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Transition Frequency :
- 250MHz
- Max Power Dissipation :
- 200mW
- Max Breakdown Voltage :
- 50V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Published :
- 2002
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Weight :
- 30mg
- hFE Min :
- 90
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1mA 6V
- Mount :
- Surface Mount
- Datasheets
- KSC1623GMTF
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KSC1623GMTF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1mA 6V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 150mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 10mA, 100mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 250MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
KSC1623GMTF Features
the DC current gain for this device is 200 @ 1mA 6V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 250MHz
KSC1623GMTF Applications
There are a lot of ON Semiconductor
KSC1623GMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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