KSC1008CYTA
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- Mfr.Part #
- KSC1008CYTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.7A TO92-3
- Stock
- 17
- In Stock ：
- 17
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 800mW
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 200mV
- Collector Base Voltage (VCBO) :
- 80V
- Voltage - Rated DC :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 800mW
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 700mA
- Current Rating :
- 700mA
- Width :
- 3.93mm
- Published :
- 2006
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Height :
- 4.7mm
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Weight :
- 240mg
- Emitter Base Voltage (VEBO) :
- 8V
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Length :
- 4.7mm
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Base Part Number :
- KSC1008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 60V
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Factory Lead Time :
- 6 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 2V
- hFE Min :
- 40
- JESD-609 Code :
- e3
- Datasheets
- KSC1008CYTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSC1008CYTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 50mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 8V.Its current rating is 700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 700mA volts.
KSC1008CYTA Features
the DC current gain for this device is 120 @ 50mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 8V
the current rating of this device is 700mA
a transition frequency of 50MHz
KSC1008CYTA Applications
There are a lot of ON Semiconductor
KSC1008CYTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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