KSB1151YS
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- Mfr.Part #
- KSB1151YS
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A TO126-3
- Stock
- 8,114
- In Stock ：
- 8,114
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 200mA, 2A
- Mount :
- Through Hole
- Packaging :
- Bulk
- Factory Lead Time :
- 2 Weeks
- hFE Min :
- 100
- Published :
- 2003
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-225AA, TO-126-3
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Collector Emitter Saturation Voltage :
- -140mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Base Voltage (VCBO) :
- -60V
- Max Power Dissipation :
- 1.3W
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Voltage - Rated DC :
- -60V
- Transition Frequency :
- 3MHz
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 1.3W
- Emitter Base Voltage (VEBO) :
- -7V
- Transistor Type :
- PNP
- Max Collector Current :
- 5A
- Weight :
- 761mg
- Base Part Number :
- KSB1151
- Collector Emitter Voltage (VCEO) :
- 60V
- Current Rating :
- -5A
- Datasheets
- KSB1151YS
PNP 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
KSB1151YS Overview
In this device, the DC current gain is 100 @ 2A 1V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 200mA, 2A.With the emitter base voltage set at -7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -5A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 5A volts at Single BJT transistors maximum.
KSB1151YS Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
a transition frequency of 3MHz
KSB1151YS Applications
There are a lot of ON Semiconductor
KSB1151YS applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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