KSB1017YTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Emitter Base Voltage (VEBO) :

-5V

ECCN Code :

EAR99

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA 5V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

2 Weeks

Max Power Dissipation :

25W

Frequency :

9MHz

Pbfree Code :

yes

Mount :

Through Hole

Height :

15.87mm

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Weight :

2.27g

Transition Frequency :

9MHz

Collector Emitter Voltage (VCEO) :

80V

Collector Base Voltage (VCBO) :

-80V

Transistor Type :

PNP

Collector Emitter Breakdown Voltage :

80V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Gain Bandwidth Product :

9MHz

hFE Min :

40

Width :

2.54mm

Operating Temperature :

150°C TJ

Voltage - Rated DC :

-80V

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

25W

Published :

2000

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 300mA, 3A

Case Connection :

Isolated

Element Configuration :

Single

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Max Collector Current :

4A

Current - Collector Cutoff (Max) :

30μA ICBO

Current Rating :

-4A

Lead Free :

Lead Free

Transistor Application :

AMPLIFIER

Collector Emitter Saturation Voltage :

-1V

Length :

10.16mm

Packaging :

Tube