KSA1281YTA
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- Mfr.Part #
- KSA1281YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO92-3
- Stock
- 1,310
- In Stock ：
- 1,310
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 Long Body (Formed Leads)
- Length :
- 5.1mm
- Collector Emitter Saturation Voltage :
- -500mV
- Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 6 Weeks
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- Base Part Number :
- KSA1281
- Terminal Finish :
- Tin (Sn)
- Height :
- 8.2mm
- Emitter Base Voltage (VEBO) :
- -5V
- Weight :
- 371.1027mg
- Transistor Type :
- PNP
- Collector Base Voltage (VCBO) :
- -50V
- Max Power Dissipation :
- 1W
- Max Breakdown Voltage :
- 50V
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Pbfree Code :
- yes
- Power Dissipation :
- 1W
- Current Rating :
- -2A
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 70
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Width :
- 4.1mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Voltage - Rated DC :
- -50V
- Number of Pins :
- 3
- Datasheets
- KSA1281YTA
PNP 150°C TJ 100nA ICBO 1 Elements TO-226-3, TO-92-3 Long Body (Formed Leads) Tape & Box (TB) Through Hole
KSA1281YTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 2A volts.
KSA1281YTA Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
KSA1281YTA Applications
There are a lot of ON Semiconductor
KSA1281YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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