KSA1182YMTF
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- Mfr.Part #
- KSA1182YMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.5A SOT23-3
- Stock
- 61,082
- In Stock ：
- 61,082
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- -35V
- Power Dissipation :
- 150mW
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Voltage - Rated DC :
- -30V
- Transition Frequency :
- 200MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Factory Lead Time :
- 6 Weeks
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- -5V
- RoHS Status :
- RoHS Compliant
- Current Rating :
- -500mA
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 200MHz
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 22 hours ago)
- Pbfree Code :
- yes
- Frequency :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Terminal Position :
- Dual
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 150mW
- Weight :
- 30mg
- Base Part Number :
- KSA1182
- hFE Min :
- 70
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 30V
- Collector Emitter Saturation Voltage :
- -100mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- ECCN Code :
- EAR99
- Datasheets
- KSA1182YMTF
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KSA1182YMTF Overview
DC current gain in this device equals 120 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -100mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 500mA volts.
KSA1182YMTF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
KSA1182YMTF Applications
There are a lot of ON Semiconductor
KSA1182YMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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