KSA1015YTA
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- Mfr.Part #
- KSA1015YTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 267,541
- In Stock ：
- 267,541
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -5V
- Length :
- 5.2mm
- Max Collector Current :
- 150mA
- Width :
- 4.19mm
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 50V
- ECCN Code :
- EAR99
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 18 hours ago)
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 80MHz
- Transition Frequency :
- 80MHz
- Published :
- 2007
- Polarity/Channel Type :
- PNP
- Base Part Number :
- KSA1015
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 400mW
- Number of Pins :
- 3
- Frequency :
- 80MHz
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 7 Weeks
- hFE Min :
- 70
- Height :
- 5.33mm
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -300mV
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -50V
- Collector Emitter Breakdown Voltage :
- 50V
- Max Power Dissipation :
- 400mW
- Voltage - Rated DC :
- -50V
- Weight :
- 240mg
- Operating Temperature :
- 150°C TJ
- Current Rating :
- -150mA
- JESD-609 Code :
- e3
- Datasheets
- KSA1015YTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA1015YTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 6V DC current gain.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 80MHz in the part.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
KSA1015YTA Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz
KSA1015YTA Applications
There are a lot of ON Semiconductor
KSA1015YTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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