KSA1015GRTA
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- Mfr.Part #
- KSA1015GRTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 70
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 150mA
- Voltage - Rated DC :
- -50V
- Max Breakdown Voltage :
- 50V
- Collector Emitter Saturation Voltage :
- -300mV
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Packaging :
- Tape and Box (TB)
- Height :
- 5.33mm
- Base Part Number :
- KSA1015
- Transistor Type :
- PNP
- Power Dissipation :
- 400mW
- Factory Lead Time :
- 6 Weeks
- Collector Base Voltage (VCBO) :
- -50V
- Length :
- 5.2mm
- Number of Elements :
- 1
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Gain Bandwidth Product :
- 80MHz
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 3
- Published :
- 2007
- Lifecycle Status :
- LIFETIME (Last Updated: 18 hours ago)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Transition Frequency :
- 80MHz
- Pbfree Code :
- yes
- Transistor Application :
- AMPLIFIER
- Current Rating :
- -150mA
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 400mW
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 50V
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Weight :
- 240mg
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Position :
- BOTTOM
- Width :
- 4.19mm
- Frequency :
- 80MHz
- Datasheets
- KSA1015GRTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSA1015GRTA Overview
This device has a DC current gain of 200 @ 2mA 6V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 80MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 150mA volts is possible.
KSA1015GRTA Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -150mA
a transition frequency of 80MHz
KSA1015GRTA Applications
There are a lot of ON Semiconductor
KSA1015GRTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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