JANTXV2N6804

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

2

Pbfree Code :

No

Mounting Type :

Through Hole

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Bulk

Series :

Military, MIL-PRF-19500/562

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Reference Standard :

MIL-19500

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

4W Ta 75W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

50A

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e0

Drain to Source Voltage (Vdss) :

100V

HTS Code :

8541.29.00.95

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-204AA, TO-3

Vgs (Max) :

±20V

Terminal Position :

BOTTOM

Published :

1997

Rds On (Max) @ Id, Vgs :

360m Ω @ 11A, 10V

Transistor Element Material :

SILICON

Rise Time :

140ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

AVALANCHE RATED

Terminal Form :

PIN/PEG

Qualification Status :

Qualified

Avalanche Energy Rating (Eas) :

81 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Terminal Finish :

Tin/Lead (Sn/Pb)

Mount :

Through Hole

JESD-30 Code :

O-MBFM-P2

Number of Pins :

3

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

100V