JANTXV2N6784U
- Mfr.Part #
- JANTXV2N6784U
- Manufacturer
- Microsemi
- Package / Case
- 18-CLCC
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 2.25A 18ULCC
- Stock
- 26,432
- In Stock :
- 26,432
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 20 mJ
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 9A
- Published :
- 1997
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Bulk
- Current - Continuous Drain (Id) @ 25°C :
- 2.25A Tc
- Series :
- Military, MIL-PRF-19500/556
- Continuous Drain Current (ID) :
- 2.25A
- ECCN Code :
- EAR99
- Reference Standard :
- MIL-19500/556
- Drain-source On Resistance-Max :
- 1.725Ohm
- Rds On (Max) @ Id, Vgs :
- 1.6 Ω @ 2.25A, 10V
- Mount :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-CQCC-N15
- Terminal Position :
- QUAD
- Number of Terminations :
- 15
- Case Connection :
- SOURCE
- Qualification Status :
- Qualified
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 200V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 8.6nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 200V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- NO LEAD
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 800mW Ta 15W Tc
- Package / Case :
- 18-CLCC
- Datasheets
- JANTXV2N6784U
N-Channel Bulk 1.6 Ω @ 2.25A, 10V ±20V 8.6nC @ 10V 200V 18-CLCC
JANTXV2N6784U Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 20 mJ.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2.25A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 9A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 200V in order to maintain normal operation.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
JANTXV2N6784U Features
the avalanche energy rating (Eas) is 20 mJ
a continuous drain current (ID) of 2.25A
based on its rated peak drain current 9A.
a 200V drain to source voltage (Vdss)
JANTXV2N6784U Applications
There are a lot of Microsemi Corporation
JANTXV2N6784U applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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