JANTXV2N4150

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Mfr.Part #
JANTXV2N4150
Manufacturer
MACOM Technology Solutions
Package / Case
TO-205AA, TO-5-3 Metal Can
Datasheet
Download
Description
TRANS NPN 70V 10A TO5
Stock
120
In Stock :
120

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Manufacturer :
MACOM Technology Solutions
Product Category :
Transistors - Bipolar (BJT) - Single
Factory Lead Time :
20 Weeks
Transition Frequency :
15MHz
Radiation Hardening :
No
Case Connection :
COLLECTOR
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 5A 5V
Current - Collector Cutoff (Max) :
10μA
Max Collector Current :
10A
Transistor Application :
SWITCHING
Mount :
Through Hole
Turn Off Time-Max (toff) :
2000ns
Terminal Finish :
Tin/Lead (Sn/Pb)
Terminal Form :
Wire
Collector Emitter Voltage (VCEO) :
70V
Transistor Type :
NPN
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 1A, 10A
Pbfree Code :
No
Qualification Status :
Qualified
Series :
Military, MIL-PRF-19500/394
Transistor Element Material :
SILICON
Published :
2007
Collector Base Voltage (VCBO) :
100V
Terminal Position :
BOTTOM
Operating Temperature :
-65°C~200°C TJ
Polarity/Channel Type :
NPN
Emitter Base Voltage (VEBO) :
10V
Configuration :
Single
Number of Elements :
1
Number of Terminations :
3
Max Power Dissipation :
1W
ECCN Code :
EAR99
Mounting Type :
Through Hole
Turn On Time-Max (ton) :
550ns
Number of Pins :
3
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-205AA, TO-5-3 Metal Can
Packaging :
Bulk
JESD-609 Code :
e0
Power Dissipation :
1W
RoHS Status :
Non-RoHS Compliant
Datasheets
JANTXV2N4150
Introducing Transistors - Bipolar (BJT) - Single MACOM Technology Solutions JANTXV2N4150 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~200°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-205AA, TO-5-3 Metal Can, JANTXV2N4150 pinout, JANTXV2N4150 datasheet PDF, JANTXV2N4150 amp .Beyond Transistors - Bipolar (BJT) - Single MACOM Technology Solutions JANTXV2N4150 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

MACOM Technology Solutions JANTXV2N4150


NPN -65°C~200°C TJ 10μA 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole

JANTXV2N4150 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 1A, 10A.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.A transition frequency of 15MHz is present in the part.Collector current can be as low as 10A volts at its maximum.

JANTXV2N4150 Features


the DC current gain for this device is 40 @ 5A 5V
the vce saturation(Max) is 2.5V @ 1A, 10A
the emitter base voltage is kept at 10V
a transition frequency of 15MHz


JANTXV2N4150 Applications


There are a lot of Microsemi Corporation
JANTXV2N4150 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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