JANTX2N6796U

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

18

DS Breakdown Voltage-Min :

100V

RoHS Status :

Non-RoHS Compliant

Case Connection :

SOURCE

Continuous Drain Current (ID) :

8A

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

28.51nC @ 10V

Qualification Status :

Qualified

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Series :

Military, MIL-PRF-19500/557

Drain-source On Resistance-Max :

0.195Ohm

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V

Power Dissipation :

25W

Packaging :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

8A

Terminal Form :

NO LEAD

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

1997

Pulsed Drain Current-Max (IDM) :

32A

JESD-30 Code :

R-CQCC-N15

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

QUAD

Number of Terminations :

15

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

800mW Ta 25W Tc

Avalanche Energy Rating (Eas) :

134 mJ

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

18-CLCC

Rise Time :

75ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

195m Ω @ 8A, 10V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

High Reliability

Reference Standard :

MIL-19500/557

ECCN Code :

EAR99

Number of Elements :

1

Pin Count :

16

Contact Plating :

Lead, Tin