JANTX2N6796

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

28.51nC @ 10V

Vgs (Max) :

±20V

Terminal Finish :

Tin/Lead (Sn/Pb)

Additional Feature :

High Reliability

Packaging :

Bulk

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

8A

Mount :

Through Hole

JESD-609 Code :

e0

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1997

Terminal Form :

Wire

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

ECCN Code :

EAR99

JEDEC-95 Code :

TO-205AF

Pin Count :

2

Lead Free :

Contains Lead

Continuous Drain Current (ID) :

8A

Transistor Element Material :

SILICON

Series :

Military, MIL-PRF-19500/557

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

100V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Power Dissipation-Max :

800mW Ta 25W Tc

Rds On (Max) @ Id, Vgs :

195m Ω @ 8A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Contact Plating :

Lead, Tin

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Power Dissipation :

800mW

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Pbfree Code :

No

Qualification Status :

Qualified

Number of Elements :

1

Package / Case :

TO-205AD, TO-39-3 Metal Can

Terminal Position :

BOTTOM