JANTX2N6788

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Power Dissipation-Max :

800mW Tc

Case Connection :

DRAIN

FET Type :

N-Channel

Continuous Drain Current (ID) :

6A

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

24A

Additional Feature :

RADIATION HARDENED

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Series :

Military, MIL-PRF-19500/555

Drain Current-Max (Abs) (ID) :

6A

Number of Pins :

3

Qualification Status :

Qualified

DS Breakdown Voltage-Min :

100V

Terminal Finish :

Tin/Lead (Sn/Pb)

Rise Time :

70ns

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Published :

1997

Terminal Form :

Wire

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

JESD-609 Code :

e0

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Configuration :

Single

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-205AF Metal Can

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

350m Ω @ 6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Number of Terminations :

3