JANTX2N6299
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- Mfr.Part #
- JANTX2N6299
- Manufacturer
- MACOM Technology Solutions
- Package / Case
- TO-213AA, TO-66-2
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 8A
- Stock
- 25
- In Stock ：
- 25
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- Manufacturer :
- MACOM Technology Solutions
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~175°C TJ
- Qualification Status :
- Qualified
- Current - Collector (Ic) (Max) :
- 8A
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity :
- PNP
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 16mA, 4A
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 64W
- Number of Terminations :
- 2
- Pbfree Code :
- No
- Package / Case :
- TO-213AA, TO-66-2
- Power - Max :
- 64W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 4A 3V
- Contact Plating :
- Lead, Tin
- Transition Frequency :
- 4MHz
- Radiation Hardening :
- No
- Factory Lead Time :
- 20 Weeks
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 3
- Terminal Form :
- PIN/PEG
- Published :
- 2002
- Max Collector Current :
- 500μA
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP - Darlington
- JESD-30 Code :
- O-MBFM-P2
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- JESD-609 Code :
- e0
- Collector Emitter Saturation Voltage :
- 2V
- Series :
- Military, MIL-PRF-19500/540
- Number of Elements :
- 1
- Datasheets
- JANTX2N6299
PNP - Darlington -65°C~175°C TJ 1 Elements 2 Terminations SILICON TO-213AA, TO-66-2 Bulk Through Hole
JANTX2N6299 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 4A 3V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.When collector current reaches its maximum, it can reach 500μA volts.
JANTX2N6299 Features
the DC current gain for this device is 750 @ 4A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 4MHz
JANTX2N6299 Applications
There are a lot of Microsemi Corporation
JANTX2N6299 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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