JANS2N3439UA
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- Mfr.Part #
- JANS2N3439UA
- Manufacturer
- Microchip Technology
- Package / Case
- 4-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 350V 1A UA
- Stock
- 31,778
- In Stock ：
- 31,778
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Turn Off Time-Max (toff) :
- 10000ns
- Turn On Time-Max (ton) :
- 1000ns
- Factory Lead Time :
- 20 Weeks
- Package / Case :
- 4-SMD, No Lead
- Operating Temperature :
- -65°C~200°C TJ
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 1A
- Pin Count :
- 4
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/368
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Qualified
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 20mA 10V
- Number of Pins :
- 4
- Max Power Dissipation :
- 800mW
- Reference Standard :
- MIL-19500/368F
- Number of Terminations :
- 4
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Collector Emitter Voltage (VCEO) :
- 350V
- Packaging :
- Bulk
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 4mA, 50mA
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 450V
- Terminal Position :
- Dual
- Datasheets
- JANS2N3439UA
NPN -65°C~200°C TJ 2μA 1 Elements 4 Terminations SILICON NPN 4-SMD, No Lead Bulk Surface Mount
JANS2N3439UA Overview
In this device, the DC current gain is 40 @ 20mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 4mA, 50mA.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
JANS2N3439UA Features
the DC current gain for this device is 40 @ 20mA 10V
the vce saturation(Max) is 500mV @ 4mA, 50mA
JANS2N3439UA Applications
There are a lot of Microsemi Corporation
JANS2N3439UA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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