JANS2N2222A
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- Mfr.Part #
- JANS2N2222A
- Manufacturer
- Microchip Technology
- Package / Case
- TO-206AA, TO-18-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A TO18
- Stock
- 1,295
- In Stock ：
- 1,295
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Bulk
- Factory Lead Time :
- 33 Weeks
- Power Dissipation :
- 500mW
- Contact Plating :
- Lead, Tin
- Max Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Mount :
- Through Hole
- Min Operating Temperature :
- -65°C
- Max Operating Temperature :
- 200°C
- Collector Emitter Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 50nA
- Radiation Hardening :
- No
- RoHS Status :
- Non-RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Operating Temperature :
- -65°C~200°C TJ
- Supplier Device Package :
- TO-18 (TO-206AA)
- Max Collector Current :
- 800mA
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 75V
- Current - Collector (Ic) (Max) :
- 800mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Series :
- Military, MIL-PRF-19500/255
- Polarity :
- NPN
- Package / Case :
- TO-206AA, TO-18-3 Metal Can
- Published :
- 2007
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Power - Max :
- 500mW
- Datasheets
- JANS2N2222A
NPN -65°C~200°C TJ 50nA 1 Elements TO-206AA, TO-18-3 Metal Can Bulk Through Hole
JANS2N2222A Overview
DC current gain in this device equals 100 @ 150mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 50mA, 500mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Product comes in TO-18 (TO-206AA) supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 800mA volts.
JANS2N2222A Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the supplier device package of TO-18 (TO-206AA)
JANS2N2222A Applications
There are a lot of Microsemi Corporation
JANS2N2222A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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