J112
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- Mfr.Part #
- J112
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- JFET N-CH 35V 625MW TO92
- Stock
- 8,310
- In Stock ：
- 8,310
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - JFETs
- Min Operating Temperature :
- -65°C
- Radiation Hardening :
- No
- Factory Lead Time :
- 7 Weeks
- Current Rating :
- 50mA
- Continuous Drain Current (ID) :
- 5mA
- Width :
- 4.19mm
- Length :
- 5.2mm
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Current - Drain (Idss) @ Vds (Vgs=0) :
- 5mA @ 15V
- Mount :
- Through Hole
- Packaging :
- Bulk
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Voltage - Breakdown (V(BR)GSS) :
- 35V
- Max Operating Temperature :
- 150°C
- Voltage :
- 35V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 350mW
- Published :
- 2006
- Power - Max :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 200.998119mg
- Height :
- 5.33mm
- Current :
- 5A
- Voltage - Cutoff (VGS off) @ Id :
- 1V @ 1μA
- Drain to Source Voltage (Vdss) :
- 35V
- Gate to Source Voltage (Vgs) :
- -35V
- Lead Free :
- Lead Free
- Breakdown Voltage :
- -35V
- Voltage - Rated DC :
- 35V
- Base Part Number :
- J112
- Resistance - RDS(On) :
- 50Ohms
- REACH SVHC :
- No SVHC
- Drain to Source Resistance :
- 50Ohm
- Supplier Device Package :
- TO-92-3
- Datasheets
- J112
,TO-226_straightlead.jpg)
J112 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at
:
J112 is a J11x series high-performance N channel silicon FET or field effect transistor. Other transistors in this family include the JS111 and 112, which have similar functions but different specifications to meet specific needs. However, sample and hold applications, choppers, analog switching applications, commentators, current limiting, and other applications are the principal applications for these transistors.
There are also some advantages to using these transistors for specific applications, such as their suitability for high-speed switching, better frequency response, good accuracy, low insertion loss, and symmetrical feature, which allows the source and drain to be swapped. Aside from these advantages, they are also very inexpensive.
The transistor's maximum gate to source voltage is -35, maximum power dissipation is 625mW, and maximum continuous gate current is 50mA, according to its specifications. The TO-92 package and the tiny SOT-23 package are both available for these transistors.
J112 Features
:
Package Type: TO-92, SOT-23
Transistor Type: N Channel JFET (Symmetrical)
Maximum Drain to Gate Voltage: 35V
Maximum Reverse Gate to Source Voltage: –35V
Maximum Continues Gate Current: 50mA
Maximum Gate to Source Cutoff Voltage : –5 to –3V
Maximum Power Dissipation: 625mW
Max Storage & Operating temperature Should Be: -55 to +150 °C
Drain and source are exchangeable.
J112 Applications
:
Audio preamplifiers applications
High gain amplifiers circuits
Low level signal amplification applications
Sensor & detector applications
Current limiting circuits
Analog switching applications
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|---|---|---|---|
| J112 | onsemi | 17,941 | SMALL SIGNAL FIELD-EFFECT TRANSI |
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| J112-D26Z | onsemi | 12,906 | JFET N-CH 35V 625MW TO92-3 |
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| J112-D27Z | onsemi | 7,081 | SMALL SIGNAL FIELD-EFFECT TRANSI |
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| J112G | onsemi | 18,553 | JFET N-CH 35V 0.35W TO92 |
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| J112RLRA | onsemi | 35,851 | JFET N-CH 35V 0.35W TO92 |
| J112RLRAG | onsemi | 58,438 | JFET N-CH 35V 0.35W TO92 |
| J112_D11Z | onsemi | 29,322 | JFET N-CH 35V 625MW TO92 |
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