J112,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - JFETs

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Source Url Status Check Date :

2013-06-14 00:00:00

Power - Max :

400mW

Operating Temperature :

150°C TJ

Pin Count :

3

FET Technology :

JUNCTION

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

40V

Operating Mode :

Depletion Mode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

50Ohm

JESD-609 Code :

e3

Terminal Position :

BOTTOM

Packaging :

Tape and Box (TB)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Transistor Element Material :

SILICON

Published :

1997

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Voltage - Cutoff (VGS off) @ Id :

1V @ 1μA

Reach Compliance Code :

Unknown

Resistance - RDS(On) :

50Ohm

HTS Code :

8541.21.00.95

Base Part Number :

J112

Input Capacitance (Ciss) (Max) @ Vds :

6pF @ 10V VGS

JESD-30 Code :

O-PBCY-T3

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Surface Mount :

No

Voltage - Breakdown (V(BR)GSS) :

40V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Drain (Idss) @ Vds (Vgs=0) :

5mA @ 15V

Number of Terminations :

3

Configuration :

Single

Power Dissipation-Max (Abs) :

0.4W