IXTC75N10

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Mfr.Part #
IXTC75N10
Manufacturer
Littelfuse
Package / Case
ISOPLUS220™
Datasheet
Download
Description
MOSFET N-CH 100V 72A ISOPLUS220
Stock
32,303
In Stock :
32,303

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Reach Compliance Code :
Compliant
Power Dissipation-Max (Abs) :
230 W
Input Capacitance (Ciss) (Max) @ Vds :
4500pF @ 25V
Power Dissipation :
230W
Number of Terminations :
3
Drain Current-Max (Abs) (ID) :
72 A
Number of Elements :
1
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
Fall Time (Typ) :
30 ns
ECCN Code :
EAR99
Package / Case :
ISOPLUS220™
Drain-source On Resistance-Max :
0.02Ohm
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Status :
Obsolete
Manufacturer :
IXYS Corporation
Current - Continuous Drain (Id) @ 25°C :
72A Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Pulsed Drain Current-Max (IDM) :
300 A
Package Shape :
RECTANGULAR
Pin Count :
3
JESD-609 Code :
e1
Number of Terminals :
3
Rise Time :
60ns
Terminal Position :
Single
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Mount :
Through Hole
Package :
Tube
Series :
MegaMOS™
DS Breakdown Voltage-Min :
100 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn-Off Delay Time :
100 ns
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
100V
Qualification Status :
Not Qualified
Terminal Form :
THROUGH-HOLE
Continuous Drain Current (ID) :
72A
Number of Pins :
3
Gate to Source Voltage (Vgs) :
20V
FET Feature :
--
Mounting Type :
Through Hole
Published :
2003
Case Connection :
Isolated
Supplier Device Package :
ISOPLUS220™
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSIP-T3
Power Dissipation-Max :
230W Tc
Packaging :
Tube
Drain to Source Voltage (Vdss) :
100V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
20m Ω @ 37.5A, 10V
Power Dissipation (Max) :
230W (Tc)
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Base Product Number :
IXTC75
Gate Charge (Qg) (Max) @ Vgs :
260nC @ 10V
RoHS Status :
RoHS Compliant
Surface Mount :
No
Datasheets
IXTC75N10
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTC75N10 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:ISOPLUS220™, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXTC75N10 pinout, IXTC75N10 datasheet PDF, IXTC75N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTC75N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTC75N10


N-Channel Tube 20m Ω @ 37.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V ISOPLUS220™

IXTC75N10 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 72A amps.In this device, the drain-source breakdown voltage is 100V and VGS=100V, so the drain-source breakdown voltage is 100V in this case.A device can conduct a maximum continuous current of [72 A] according to its drain current.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 300 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 100 V to maintain normal operation.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTC75N10 Features


a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 300 A.
a 100V drain to source voltage (Vdss)


IXTC75N10 Applications


There are a lot of IXYS
IXTC75N10 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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