IXKR25N80C
- Mfr.Part #
- IXKR25N80C
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 25A ISOPLUS247
- Stock
- 28,920
- In Stock :
- 28,920
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Threshold Voltage :
- 4V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 25A
- Number of Terminations :
- 3
- Transistor Type :
- 1 N-Channel
- Max Power Dissipation :
- 250W
- Channel Mode :
- Enhancement
- Product Status :
- Active
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Mounting Style :
- Through Hole
- Configuration :
- Single
- Number of Terminals :
- 3
- Manufacturer :
- IXYS
- Pbfree Code :
- yes
- Number of Channels :
- 1 Channel
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 800 V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 28 Weeks
- Surface Mount :
- No
- Transistor Polarity :
- N-Channel
- Isolation Voltage :
- 2.5kV
- Drain-source On Resistance-Max :
- 0.15 Ω
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- Isolated
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 18A, 10V
- Resistance :
- 125mOhm
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- ISOPLUS247™
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 2mA
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Package :
- Tube
- Minimum Operating Temperature :
- - 40 C
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation :
- 250W
- Avalanche Energy Rating (Eas) :
- 670 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- CoolMOS™
- JESD-609 Code :
- e1
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Rise Time :
- 15ns
- Power Dissipation (Max) :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 355nC @ 10V
- Product Category :
- MOSFET
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 72 ns
- Fall Time (Typ) :
- 6 ns
- Drain to Source Voltage (Vdss) :
- 800V
- Drain to Source Breakdown Voltage :
- 800V
- Drain Current-Max (Abs) (ID) :
- 25 A
- JESD-30 Code :
- R-PSIP-T3
- Terminal Form :
- THROUGH-HOLE
- Terminal Position :
- Single
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Number of Pins :
- 3
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Width :
- 5.21 mm
- Published :
- 2008
- Brand :
- IXYS
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Maximum Operating Temperature :
- + 150 C
- Height :
- 21.34 mm
- REACH SVHC :
- No SVHC
- Supplier Device Package :
- ISOPLUS247™
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Length :
- 16.13 mm
- Tradename :
- CoolMOS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXKR25
- Datasheets
- IXKR25N80C

N-Channel Tube 150m Ω @ 18A, 10V ±20V 355nC @ 10V 800V ISOPLUS247™
IXKR25N80C Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 670 mJ.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 25A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.25 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.
IXKR25N80C Features
the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 72 ns
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)
IXKR25N80C Applications
There are a lot of IXYS
IXKR25N80C applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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