IXKR25N80C

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Mfr.Part #
IXKR25N80C
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 800V 25A ISOPLUS247
Stock
28,920
In Stock :
28,920

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Threshold Voltage :
4V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
25A
Number of Terminations :
3
Transistor Type :
1 N-Channel
Max Power Dissipation :
250W
Channel Mode :
Enhancement
Product Status :
Active
Package Shape :
RECTANGULAR
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Mounting Style :
Through Hole
Configuration :
Single
Number of Terminals :
3
Manufacturer :
IXYS
Pbfree Code :
yes
Number of Channels :
1 Channel
Number of Elements :
1
DS Breakdown Voltage-Min :
800 V
Mounting Type :
Through Hole
Factory Lead Time :
28 Weeks
Surface Mount :
No
Transistor Polarity :
N-Channel
Isolation Voltage :
2.5kV
Drain-source On Resistance-Max :
0.15 Ω
RoHS Status :
ROHS3 Compliant
Case Connection :
Isolated
Rds On (Max) @ Id, Vgs :
150m Ω @ 18A, 10V
Resistance :
125mOhm
Operating Mode :
ENHANCEMENT MODE
Package / Case :
ISOPLUS247™
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
4V @ 2mA
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Element Configuration :
Single
FET Feature :
Super Junction
FET Type :
N-Channel
Package :
Tube
Minimum Operating Temperature :
- 40 C
Operating Temperature :
-40°C~150°C TJ
Power Dissipation :
250W
Avalanche Energy Rating (Eas) :
670 mJ
Gate to Source Voltage (Vgs) :
20V
Series :
CoolMOS™
JESD-609 Code :
e1
Product Type :
MOSFET
Reach Compliance Code :
Compliant
Rise Time :
15ns
Power Dissipation (Max) :
--
Gate Charge (Qg) (Max) @ Vgs :
355nC @ 10V
Product Category :
MOSFET
Mount :
Through Hole
Turn-Off Delay Time :
72 ns
Fall Time (Typ) :
6 ns
Drain to Source Voltage (Vdss) :
800V
Drain to Source Breakdown Voltage :
800V
Drain Current-Max (Abs) (ID) :
25 A
JESD-30 Code :
R-PSIP-T3
Terminal Form :
THROUGH-HOLE
Terminal Position :
Single
Lead Free :
Lead Free
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
RoHS :
Details
Number of Pins :
3
Packaging :
Tube
Transistor Element Material :
SILICON
Width :
5.21 mm
Published :
2008
Brand :
IXYS
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Maximum Operating Temperature :
+ 150 C
Height :
21.34 mm
REACH SVHC :
No SVHC
Supplier Device Package :
ISOPLUS247™
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
3
Length :
16.13 mm
Tradename :
CoolMOS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Base Product Number :
IXKR25
Datasheets
IXKR25N80C
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXKR25N80C from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:ISOPLUS247™, Operating Temperature:-40°C~150°C TJ, Number of Pins:3, IXKR25N80C pinout, IXKR25N80C datasheet PDF, IXKR25N80C amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXKR25N80C ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXKR25N80C


N-Channel Tube 150m Ω @ 18A, 10V ±20V 355nC @ 10V 800V ISOPLUS247™

IXKR25N80C Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 670 mJ.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 25A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.25 A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 72 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.To maintain normal operation, the DS breakdown voltage should be kept above 800 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 800V.Using drive voltage (10V) reduces this device's overall power consumption.

IXKR25N80C Features


the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 72 ns
a threshold voltage of 4V
a 800V drain to source voltage (Vdss)


IXKR25N80C Applications


There are a lot of IXYS
IXKR25N80C applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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