IXKP35N60C5

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

DS Breakdown Voltage-Min :

600 V

Rds On (Max) @ Id, Vgs :

100m Ω @ 18A, 10V

Power Dissipation (Max) :

--

Drain Current-Max (Abs) (ID) :

35 A

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.1Ohm

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

CoolMOS™

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

800 mJ

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

FET Feature :

--

Operating Temperature :

-40°C~150°C TJ

Number of Elements :

1

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Number of Terminals :

3

Transistor Element Material :

SILICON

Surface Mount :

No

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Number of Terminations :

3

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Published :

2008

Supplier Device Package :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXKP35

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

600V

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Packaging :

Tube

Package Shape :

RECTANGULAR

Package / Case :

TO-220-3

Mount :

Through Hole

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Manufacturer :

IXYS Corporation

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

3.9V @ 1.2mA

Continuous Drain Current (ID) :

35A