IXKN40N60C

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Product Type :

Discrete Semiconductor Modules

Reach Compliance Code :

Compliant

Base Product Number :

IXKN40

Minimum Operating Temperature :

- 40 C

Terminal Position :

UPPER

Power Dissipation :

290W

Drain Current-Max (Abs) (ID) :

40 A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

25.42 mm

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Power Dissipation (Max) :

290W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

110 ns

Qualification Status :

Not Qualified

FET Feature :

Super Junction

RoHS Status :

ROHS3 Compliant

Mounting Style :

Chassis Mount

Tradename :

CoolMOS

Package Shape :

RECTANGULAR

Product Category :

Discrete Semiconductor Modules

Mount :

Chassis Mount

Number of Terminals :

4

Lead Free :

Lead Free

Published :

2008

Mounting Type :

Chassis Mount

Length :

38.2 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

30ns

Number of Pins :

4

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

Polarity/Channel Type :

N-Channel

Pin Count :

4

FET Type :

N-Channel

Surface Mount :

No

Vgs(th) (Max) @ Id :

3.9V @ 2.5mA

JESD-30 Code :

R-PUFM-X4

Manufacturer :

IXYS

Package / Case :

SOT-227-4, miniBLOC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™

Type :

CoolMOS Power MOSFET

Continuous Drain Current (ID) :

40A

Power Dissipation-Max :

290W Tc

RoHS :

Details

Avalanche Energy Rating (Eas) :

1800 mJ

Product :

Power MOSFET Modules

Transistor Polarity :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

28 Weeks

Vf - Forward Voltage :

0.9 V

Terminal Finish :

Nickel (Ni)

Pbfree Code :

yes

Height :

12.22 mm

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Power Dissipation-Max (Abs) :

290 W

Number of Terminations :

4

Drain-source On Resistance-Max :

0.07Ohm

Terminal Form :

UNSPECIFIED

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

600 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Brand :

IXYS

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

70m Ω @ 500mA, 10V

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Supplier Device Package :

SOT-227B

Operating Temperature :

-40°C~150°C TJ

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Fall Time (Typ) :

10 ns

Drain to Source Breakdown Voltage :

600V

Case Connection :

Isolated

Package :

Tube