IXFV74N20P
- Mfr.Part #
- IXFV74N20P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 74A PLUS220
- Stock
- 19,220
- In Stock :
- 19,220
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2008
- Drain to Source Breakdown Voltage :
- 200V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 200V
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Number of Pins :
- 3
- DS Breakdown Voltage-Min :
- 200 V
- Reach Compliance Code :
- Compliant
- Turn-Off Delay Time :
- 60 ns
- Rds On (Max) @ Id, Vgs :
- 34m Ω @ 37A, 10V
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS Corporation
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) :
- 74 A
- Power Dissipation-Max :
- 480W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- PolarHT™ HiPerFET™
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Number of Terminals :
- 3
- Power Dissipation-Max (Abs) :
- 480 W
- Packaging :
- Bulk
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Mount :
- Through Hole
- FET Feature :
- --
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.034 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 3300pF @ 25V
- Package Shape :
- RECTANGULAR
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e1
- Power Dissipation :
- 480W
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- Base Product Number :
- IXFV74
- Product Status :
- Obsolete
- Continuous Drain Current (ID) :
- 74A
- Package / Case :
- TO-220-3, Short Tab
- Power Dissipation (Max) :
- 480W (Tc)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 21 ns
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSIP-T3
- Number of Elements :
- 1
- Supplier Device Package :
- PLUS220
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 107nC @ 10V
- Package :
- Box
- Surface Mount :
- No
- Rise Time :
- 21ns
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 200A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXFV74N20P
N-Channel Bulk 34m Ω @ 37A, 10V ±20V 3300pF @ 25V 107nC @ 10V 200V TO-220-3, Short Tab
IXFV74N20P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 74A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 200V, and this device has a drainage-to-source breakdown voltage of 200VV.Drain current refers to the maximum continuous current a device can conduct, and it is 74 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 200A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 200 V.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFV74N20P Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 200A.
a 200V drain to source voltage (Vdss)
IXFV74N20P Applications
There are a lot of IXYS
IXFV74N20P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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