IXFV36N50PS

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Mfr.Part #
IXFV36N50PS
Manufacturer
Littelfuse
Package / Case
PLUS-220SMD
Datasheet
Download
Description
MOSFET N-CH 500V 36A PLUS-220SMD
Stock
46,438
In Stock :
46,438

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
90A
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED
Case Connection :
DRAIN
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Form :
Gull wing
Power Dissipation-Max :
540W Tc
REACH SVHC :
No SVHC
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
93nC @ 10V
Avalanche Energy Rating (Eas) :
1500 mJ
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Surface Mount :
yes
Mount :
Surface Mount
Manufacturer :
IXYS Corporation
Terminal Position :
Single
Supplier Device Package :
PLUS-220SMD
Published :
2006
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
RoHS Compliant
Package / Case :
PLUS-220SMD
Operating Temperature :
-55°C~150°C TJ
Voltage - Rated DC :
500V
Current Rating :
36A
Transistor Application :
SWITCHING
Number of Pins :
220
Power Dissipation (Max) :
540W (Tc)
Drain to Source Breakdown Voltage :
500V
Threshold Voltage :
5V
Power Dissipation-Max (Abs) :
540 W
Drain-source On Resistance-Max :
0.17Ohm
Vgs(th) (Max) @ Id :
5V @ 4mA
Polarity/Channel Type :
N-Channel
Drain Current-Max (Abs) (ID) :
36 A
Element Configuration :
Single
JESD-30 Code :
R-PSSO-G2
Mounting Type :
Surface Mount
Turn-Off Delay Time :
75 ns
Base Product Number :
IXFV36
Vgs (Max) :
±30V
DS Breakdown Voltage-Min :
500 V
Termination :
SMD/SMT
Package Shape :
RECTANGULAR
Number of Terminals :
2
Gate to Source Voltage (Vgs) :
30V
ECCN Code :
EAR99
Number of Terminations :
2
Fall Time (Typ) :
21 ns
Rds On (Max) @ Id, Vgs :
170m Ω @ 500mA, 10V
FET Feature :
--
Drain to Source Voltage (Vdss) :
500V
Reach Compliance Code :
Compliant
Dual Supply Voltage :
500V
FET Type :
N-Channel
Reverse Recovery Time :
200 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Series :
HiPerFET™, PolarP2™
Lead Free :
Lead Free
Package :
Tube
Current - Continuous Drain (Id) @ 25°C :
36A Tc
Power Dissipation :
540W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Nominal Vgs :
5 V
Product Status :
Obsolete
Packaging :
Tube
Rise Time :
27ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pin Count :
3
Continuous Drain Current (ID) :
36A
Pbfree Code :
yes
Datasheets
IXFV36N50PS
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV36N50PS from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:PLUS-220SMD, Operating Temperature:-55°C~150°C TJ, Number of Pins:220, Mounting Type:Surface Mount, Number of Terminations:2, IXFV36N50PS pinout, IXFV36N50PS datasheet PDF, IXFV36N50PS amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV36N50PS ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 93nC @ 10V 500V PLUS-220SMD

IXFV36N50PS Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 36 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 90A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFV36N50PS Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 90A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)


IXFV36N50PS Applications


There are a lot of IXYS
IXFV36N50PS applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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