IXFV36N50PS
- Mfr.Part #
- IXFV36N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 36A PLUS-220SMD
- Stock
- 46,438
- In Stock :
- 46,438
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 90A
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- AVALANCHE RATED
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 540W Tc
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 5500pF @ 25V
- Surface Mount :
- yes
- Mount :
- Surface Mount
- Manufacturer :
- IXYS Corporation
- Terminal Position :
- Single
- Supplier Device Package :
- PLUS-220SMD
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Package / Case :
- PLUS-220SMD
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 500V
- Current Rating :
- 36A
- Transistor Application :
- SWITCHING
- Number of Pins :
- 220
- Power Dissipation (Max) :
- 540W (Tc)
- Drain to Source Breakdown Voltage :
- 500V
- Threshold Voltage :
- 5V
- Power Dissipation-Max (Abs) :
- 540 W
- Drain-source On Resistance-Max :
- 0.17Ohm
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Polarity/Channel Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 36 A
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 75 ns
- Base Product Number :
- IXFV36
- Vgs (Max) :
- ±30V
- DS Breakdown Voltage-Min :
- 500 V
- Termination :
- SMD/SMT
- Package Shape :
- RECTANGULAR
- Number of Terminals :
- 2
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 21 ns
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 500mA, 10V
- FET Feature :
- --
- Drain to Source Voltage (Vdss) :
- 500V
- Reach Compliance Code :
- Compliant
- Dual Supply Voltage :
- 500V
- FET Type :
- N-Channel
- Reverse Recovery Time :
- 200 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Series :
- HiPerFET™, PolarP2™
- Lead Free :
- Lead Free
- Package :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Power Dissipation :
- 540W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Nominal Vgs :
- 5 V
- Product Status :
- Obsolete
- Packaging :
- Tube
- Rise Time :
- 27ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 36A
- Pbfree Code :
- yes
- Datasheets
- IXFV36N50PS
N-Channel Tube 170m Ω @ 500mA, 10V ±30V 5500pF @ 25V 93nC @ 10V 500V PLUS-220SMD
IXFV36N50PS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1500 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.There is no drain current on this device since the maximum continuous current it can conduct is 36 A.As a result of its turn-off delay time, which is 75 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 90A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 5V.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFV36N50PS Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 90A.
a threshold voltage of 5V
a 500V drain to source voltage (Vdss)
IXFV36N50PS Applications
There are a lot of IXYS
IXFV36N50PS applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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