IXFV30N50P
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- Mfr.Part #
- IXFV30N50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A PLUS220
- Stock
- 3,058
- In Stock ：
- 3,058
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Continuous Drain Current (ID) :
- 30A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 460W Tc
- JESD-30 Code :
- R-PSIP-T3
- Pbfree Code :
- yes
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 15A, 10V
- Power Dissipation :
- 460W
- Current Rating :
- 30A
- Mounting Type :
- Through Hole
- Manufacturer :
- IXYS Corporation
- Terminal Form :
- THROUGH-HOLE
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Series :
- HiPerFET™, PolarHT™
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 3
- FET Feature :
- --
- Reach Compliance Code :
- Compliant
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package :
- Tube
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 24 ns
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Status :
- Obsolete
- Drain to Source Breakdown Voltage :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Base Product Number :
- IXFV30
- Surface Mount :
- No
- Power Dissipation (Max) :
- 460W (Tc)
- Polarity/Channel Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 500V
- Rise Time :
- 24ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 75A
- DS Breakdown Voltage-Min :
- 500 V
- Published :
- 2006
- Additional Feature :
- AVALANCHE RATED
- JESD-609 Code :
- e1
- Supplier Device Package :
- PLUS220
- Vgs (Max) :
- ±30V
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 82 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Drain-source On Resistance-Max :
- 0.2Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-220-3, Short Tab
- Datasheets
- IXFV30N50P
N-Channel Tube 200m Ω @ 15A, 10V ±30V 4150pF @ 25V 70nC @ 10V 500V TO-220-3, Short Tab
IXFV30N50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 4150pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 82 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 75A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFV30N50P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 82 ns
based on its rated peak drain current 75A.
a 500V drain to source voltage (Vdss)
IXFV30N50P Applications
There are a lot of IXYS
IXFV30N50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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