IXFV26N60P
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- Mfr.Part #
- IXFV26N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 26A PLUS220
- Stock
- 23,767
- In Stock ：
- 23,767
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Package :
- Tube
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Reach Compliance Code :
- Compliant
- Pbfree Code :
- yes
- Product Status :
- Obsolete
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 460W Tc
- Package / Case :
- TO-220-3, Short Tab
- Fall Time (Typ) :
- 21 ns
- Series :
- PolarHV™
- Input Capacitance (Ciss) (Max) @ Vds :
- 4150pF @ 25V
- Polarity/Channel Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 65A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 3
- Turn-Off Delay Time :
- 75 ns
- Number of Pins :
- 3
- Power Dissipation (Max) :
- 460W (Tc)
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Manufacturer :
- IXYS Corporation
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 27ns
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 26A
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Number of Terminations :
- 3
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Current Rating :
- 26A
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.27Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package Shape :
- RECTANGULAR
- JESD-609 Code :
- e1
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2006
- Mounting Type :
- Through Hole
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 600 V
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSIP-T3
- Packaging :
- Tube
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 500mA, 10V
- Supplier Device Package :
- PLUS220
- Base Product Number :
- IXFV26
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 600V
- Power Dissipation :
- 460W
- Drain to Source Breakdown Voltage :
- 600V
- Vgs (Max) :
- ±30V
- Terminal Position :
- Single
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Elements :
- 1
- Datasheets
- IXFV26N60P
N-Channel Tube 270m Ω @ 500mA, 10V ±30V 4150pF @ 25V 72nC @ 10V 600V TO-220-3, Short Tab
IXFV26N60P Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1200 mJ.A device's maximum input capacitance is 4150pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 26A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 65A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 600 V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFV26N60P Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 65A.
a 600V drain to source voltage (Vdss)
IXFV26N60P Applications
There are a lot of IXYS
IXFV26N60P applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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