IXFV22N60PS
- Mfr.Part #
- IXFV22N60PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 22A PLUS-220SMD
- Stock
- 9,458
- In Stock :
- 9,458
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 600V
- Series :
- HiPerFET™, PolarHT™
- Avalanche Energy Rating (Eas) :
- 1000 mJ
- Rds On (Max) @ Id, Vgs :
- 350m Ω @ 11A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Manufacturer :
- IXYS Corporation
- Gate Charge (Qg) (Max) @ Vgs :
- 58nC @ 10V
- Rise Time :
- 20ns
- Surface Mount :
- yes
- Supplier Device Package :
- PLUS-220SMD
- Published :
- 2006
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- FET Feature :
- --
- Packaging :
- Tube
- Product Status :
- Obsolete
- Continuous Drain Current (ID) :
- 22A
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 3600pF @ 25V
- RoHS Status :
- RoHS Compliant
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Package / Case :
- PLUS-220SMD
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Power Dissipation (Max) :
- 400W (Tc)
- Fall Time (Typ) :
- 23 ns
- Vgs(th) (Max) @ Id :
- 5.5V @ 4mA
- Drain-source On Resistance-Max :
- 0.35 Ω
- Drain to Source Breakdown Voltage :
- 600V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 60 ns
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 400W Tc
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Pulsed Drain Current-Max (IDM) :
- 66A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 600 V
- Base Product Number :
- IXFV22
- Number of Terminals :
- 2
- Number of Terminations :
- 2
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Package :
- Tube
- Transistor Application :
- SWITCHING
- Current Rating :
- 22A
- Additional Feature :
- AVALANCHE RATED
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 400W
- Gate to Source Voltage (Vgs) :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Datasheets
- IXFV22N60PS
N-Channel Tube 350m Ω @ 11A, 10V ±30V 3600pF @ 25V 58nC @ 10V 600V PLUS-220SMD
IXFV22N60PS Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1000 mJ.The maximum input capacitance of this device is 3600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 60 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFV22N60PS Features
the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 66A.
a 600V drain to source voltage (Vdss)
IXFV22N60PS Applications
There are a lot of IXYS
IXFV22N60PS applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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