IXFV22N50PS
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- Mfr.Part #
- IXFV22N50PS
- Manufacturer
- Littelfuse
- Package / Case
- PLUS-220SMD
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A PLUS-220SMD
- Stock
- 15,838
- In Stock ：
- 15,838
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Terminal Form :
- Gull wing
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 750 mJ
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 11A, 10V
- Drain to Source Voltage (Vdss) :
- 500V
- Supplier Device Package :
- PLUS-220SMD
- Packaging :
- Tube
- Power Dissipation-Max (Abs) :
- 350 W
- DS Breakdown Voltage-Min :
- 500 V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Package / Case :
- PLUS-220SMD
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 350W Tc
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS Corporation
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Continuous Drain Current (ID) :
- 22A
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Current Rating :
- 22A
- Drain to Source Breakdown Voltage :
- 500V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- Product Status :
- Obsolete
- Terminal Position :
- Single
- FET Feature :
- --
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Pulsed Drain Current-Max (IDM) :
- 55A
- Number of Terminals :
- 2
- Power Dissipation (Max) :
- 350W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 21 ns
- Drain Current-Max (Abs) (ID) :
- 22 A
- Series :
- HiPerFET™, PolarHT™
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package :
- Tube
- Element Configuration :
- Single
- Base Product Number :
- IXFV22
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2630pF @ 25V
- Rise Time :
- 25ns
- Published :
- 2006
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 72 ns
- Voltage - Rated DC :
- 500V
- Drain-source On Resistance-Max :
- 0.27Ohm
- Reach Compliance Code :
- Compliant
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 350W
- Package Shape :
- RECTANGULAR
- Transistor Application :
- SWITCHING
- Datasheets
- IXFV22N50PS
N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V PLUS-220SMD
IXFV22N50PS Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 750 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2630pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 22 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 72 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 55A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500 V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFV22N50PS Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 55A.
a 500V drain to source voltage (Vdss)
IXFV22N50PS Applications
There are a lot of IXYS
IXFV22N50PS applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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