IXFV22N50P

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Mfr.Part #
IXFV22N50P
Manufacturer
Littelfuse
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 500V 22A PLUS220
Stock
19,662
In Stock :
19,662

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Avalanche Energy Rating (Eas) :
750 mJ
Published :
2006
Continuous Drain Current (ID) :
22A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Number of Pins :
3
Drain to Source Breakdown Voltage :
500V
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Case Connection :
DRAIN
Manufacturer :
IXYS Corporation
Pin Count :
3
Transistor Application :
SWITCHING
FET Feature :
--
Drain-source On Resistance-Max :
0.27Ohm
Package Shape :
RECTANGULAR
DS Breakdown Voltage-Min :
500 V
Package / Case :
TO-220-3, Short Tab
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
2630pF @ 25V
Current Rating :
22A
JESD-609 Code :
e1
Pulsed Drain Current-Max (IDM) :
55A
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max (Abs) :
350 W
Power Dissipation-Max :
350W Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±30V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
350W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain Current-Max (Abs) (ID) :
22 A
Number of Terminations :
3
Voltage - Rated DC :
500V
Drain to Source Voltage (Vdss) :
500V
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
PLUS220
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Through Hole
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
270m Ω @ 11A, 10V
Rise Time :
25ns
Fall Time (Typ) :
21 ns
Element Configuration :
Single
Pbfree Code :
yes
Package :
Tube
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Number of Terminals :
3
JESD-30 Code :
R-PSIP-T3
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Power Dissipation (Max) :
350W (Tc)
Product Status :
Obsolete
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Mount :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Series :
HiPerFET™, PolarHT™
Gate to Source Voltage (Vgs) :
30V
FET Type :
N-Channel
RoHS Status :
RoHS Compliant
Base Product Number :
IXFV22
Turn-Off Delay Time :
72 ns
Terminal Form :
THROUGH-HOLE
Datasheets
IXFV22N50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFV22N50P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Short Tab, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, IXFV22N50P pinout, IXFV22N50P datasheet PDF, IXFV22N50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFV22N50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFV22N50P


N-Channel Tube 270m Ω @ 11A, 10V ±30V 2630pF @ 25V 50nC @ 10V 500V TO-220-3, Short Tab

IXFV22N50P Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.A device's maximum input capacitance is 2630pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 22A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 22 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 72 ns.Its maximum pulsed drain current is 55A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFV22N50P Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 72 ns
based on its rated peak drain current 55A.
a 500V drain to source voltage (Vdss)


IXFV22N50P Applications


There are a lot of IXYS
IXFV22N50P applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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