IXFQ34N50P3
- Mfr.Part #
- IXFQ34N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 34A TO3P
- Stock
- 70
- In Stock :
- 70
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-On Delay Time :
- 23 ns
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Max Power Dissipation :
- 695 W
- Element Configuration :
- Single
- Input Capacitance :
- 3.26 nF
- Power Dissipation-Max :
- 695W Tc
- Manufacturer :
- IXYS
- Published :
- 2013
- Package Type :
- TO-3PN
- Number of Elements per Chip :
- 1
- Brand :
- IXYS
- Supplier Device Package :
- TO-3P
- Height :
- 20.3mm
- Package / Case :
- TO-3P-3, SC-65-3
- Number of Pins :
- 3
- Max Operating Temperature :
- 150 °C
- Turn On Delay Time :
- 23 ns
- Mount :
- Through Hole
- Transistor Polarity :
- N-Channel
- FET Type :
- N-Channel
- Product Category :
- MOSFET
- Channel Mode :
- Enhancement
- Rds On Max :
- 170 mΩ
- Minimum Operating Temperature :
- -55 °C
- Series :
- HiPerFET™, Polar3™
- Base Product Number :
- IXFQ34
- Pin Count :
- 3
- Maximum Operating Temperature :
- +150 °C
- Factory Lead Time :
- 26 Weeks
- FET Feature :
- --
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 40 ns
- RoHS :
- Details
- Packaging :
- Tube
- Vgs (Max) :
- ±30V
- Power Dissipation (Max) :
- 695W (Tc)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 3260pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 17A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Product Type :
- MOSFET
- Reach Compliance Code :
- Compliant
- Channel Type :
- N
- Subcategory :
- MOSFETs
- Product Status :
- Active
- Mounting Style :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Package :
- Tube
- Tradename :
- HiPerFET
- Continuous Drain Current (ID) :
- 34A
- Min Operating Temperature :
- -55 °C
- Width :
- 4.9mm
- Drain to Source Voltage (Vdss) :
- 500V
- Drain to Source Resistance :
- 175 mΩ
- Length :
- 15.8mm
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Datasheets
- IXFQ34N50P3

N-Channel Tube 170m Ω @ 17A, 10V ±30V 3260pF @ 25V 60nC @ 10V 500V TO-3P-3, SC-65-3
IXFQ34N50P3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3260pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 34A amps.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 175 mΩ.A turn-on delay time of 23 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFQ34N50P3 Features
a continuous drain current (ID) of 34A
the turn-off delay time is 40 ns
single MOSFETs transistor is 175 mΩ
a 500V drain to source voltage (Vdss)
IXFQ34N50P3 Applications
There are a lot of IXYS
IXFQ34N50P3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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