IXFM67N10
- Mfr.Part #
- IXFM67N10
- Manufacturer
- Littelfuse
- Package / Case
- TO-204AE
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 67A TO204AE
- Stock
- 9,848
- In Stock :
- 9,848
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 268A
- Number of Terminals :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Package / Case :
- TO-204AE
- Power Dissipation-Max (Abs) :
- 300 W
- JESD-30 Code :
- O-MBFM-P2
- Manufacturer :
- IXYS Corporation
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- PIN/PEG
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Obsolete
- Series :
- HiPerFET™
- Power Dissipation Ambient-Max :
- 300 W
- Package Shape :
- Round
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Base Product Number :
- IXFM67
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation (Max) :
- 300W (Tc)
- Pin Count :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Position :
- BOTTOM
- Published :
- 2012
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 67A
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Number of Terminations :
- 2
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 300W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 33.5A, 10V
- DS Breakdown Voltage-Min :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package :
- Tube
- JEDEC-95 Code :
- TO-204AE
- Vgs (Max) :
- ±20V
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Current - Continuous Drain (Id) @ 25°C :
- 67A Tc
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.025Ohm
- Number of Elements :
- 1
- Supplier Device Package :
- TO-204AE
- FET Feature :
- --
- Datasheets
- IXFM67N10
N-Channel Tube 25m Ω @ 33.5A, 10V ±20V 4500pF @ 25V 260nC @ 10V 100V TO-204AE
IXFM67N10 Overview
A device's maximal input capacitance is 4500pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 67A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 268A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFM67N10 Features
based on its rated peak drain current 268A.
a 100V drain to source voltage (Vdss)
IXFM67N10 Applications
There are a lot of IXYS
IXFM67N10 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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