IXFJ40N30
- Mfr.Part #
- IXFJ40N30
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3, Short Tab
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 40A TO268
- Stock
- 32,053
- In Stock :
- 32,053
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-268AA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Drain Current-Max (Abs) (ID) :
- 40 A
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 40A
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Product Status :
- Obsolete
- Surface Mount :
- No
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 20A, 10V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS Corporation
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Element Configuration :
- Single
- Resistance :
- 80mOhm
- Package / Case :
- TO-220-3, Short Tab
- Power Dissipation-Max (Abs) :
- 300 W
- Case Connection :
- DRAIN
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Drain to Source Breakdown Voltage :
- 300V
- Drain-source On Resistance-Max :
- 0.085 Ω
- Input Capacitance (Ciss) (Max) @ Vds :
- 4800pF @ 25V
- Turn-Off Delay Time :
- 75 ns
- Pin Count :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Drain to Source Voltage (Vdss) :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HiPerFET™
- Published :
- 2000
- Supplier Device Package :
- TO-268
- Number of Elements :
- 1
- Rise Time :
- 60ns
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300W
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 300W Tc
- Power Dissipation (Max) :
- 300W (Tc)
- Pulsed Drain Current-Max (IDM) :
- 160A
- FET Feature :
- --
- Base Product Number :
- IXFJ40
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 300 V
- JESD-30 Code :
- R-PSIP-T3
- Packaging :
- Tube
- Fall Time (Typ) :
- 45 ns
- Vgs (Max) :
- ±20V
- Datasheets
- IXFJ40N30
N-Channel Tube 80m Ω @ 20A, 10V ±20V 4800pF @ 25V 200nC @ 10V 300V TO-220-3, Short Tab
IXFJ40N30 Overview
A device's maximal input capacitance is 4800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 40A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 300V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 40 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 75 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 160A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 300 V.This transistor requires a 300V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFJ40N30 Features
a continuous drain current (ID) of 40A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 160A.
a 300V drain to source voltage (Vdss)
IXFJ40N30 Applications
There are a lot of IXYS
IXFJ40N30 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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