IXFF24N100

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Mfr.Part #
IXFF24N100
Manufacturer
Littelfuse
Package / Case
i4-Pac™-5 (3 Leads)
Datasheet
Download
Description
MOSFET N-CH 1000V 22A I4PAC
Stock
30,808
In Stock :
30,808

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
HiPerFET™
Transistor Application :
SWITCHING
Drain-source On Resistance-Max :
0.39 Ω
Max Operating Temperature :
150 °C
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Gate to Source Voltage (Vgs) :
20V
Terminal Form :
THROUGH-HOLE
Package / Case :
i4-Pac™-5 (3 Leads)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Drain Current-Max (Abs) (ID) :
22 A
Turn-Off Delay Time :
75 ns
Packaging :
Tube
Min Operating Temperature :
-55 °C
Drain to Source Breakdown Voltage :
1kV
Package Shape :
RECTANGULAR
Transistor Element Material :
SILICON
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminals :
3
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
390m Ω @ 15A, 10V
Polarity/Channel Type :
N-Channel
Number of Pins :
3
Drain to Source Voltage (Vdss) :
1000V
Terminal Position :
Single
Manufacturer :
IXYS Corporation
Reach Compliance Code :
Compliant
Vgs (Max) :
±20V
Pin Count :
5
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXFF24
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
JESD-609 Code :
e1
Case Connection :
Isolated
DS Breakdown Voltage-Min :
1000 V
Element Configuration :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
120A
Vgs(th) (Max) @ Id :
5V @ 8mA
Package :
Tube
Number of Terminations :
3
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation (Max) :
--
Drain to Source Resistance :
390 mΩ
Mount :
Through Hole
Supplier Device Package :
ISOPLUS i4-PAC™
Additional Feature :
HIGH VOLTAGE, HIGH RELIABILITY
Surface Mount :
No
FET Feature :
--
Rds On Max :
390 mΩ
Published :
2006
Operating Temperature :
-55°C~150°C TJ
Configuration :
Single
Continuous Drain Current (ID) :
22A
Product Status :
Obsolete
JESD-30 Code :
R-PSIP-T3
RoHS :
Compliant
RoHS Status :
RoHS Compliant
Datasheets
IXFF24N100
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFF24N100 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:i4-Pac™-5 (3 Leads), Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, IXFF24N100 pinout, IXFF24N100 datasheet PDF, IXFF24N100 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFF24N100 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 390m Ω @ 15A, 10V ±20V 250nC @ 10V 1000V i4-Pac™-5 (3 Leads)

IXFF24N100 Overview


Its continuous drain current is 22A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1kV, and this device has a drain-to-source breakdown voltage of 1kV voltage.Its drain current is 22 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 75 ns.Its maximum pulsed drain current is 120A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 390 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 1000 V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFF24N100 Features


a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 120A.
single MOSFETs transistor is 390 mΩ
a 1000V drain to source voltage (Vdss)


IXFF24N100 Applications


There are a lot of IXYS
IXFF24N100 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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