IXFE55N50
- Mfr.Part #
- IXFE55N50
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 47A SOT-227B
- Stock
- 40,572
- In Stock :
- 40,572
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFE55
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain Current-Max (Abs) (ID) :
- 47 A
- Drain to Source Voltage (Vdss) :
- 500V
- Qualification Status :
- Not Qualified
- Manufacturer :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Length :
- 38.23 mm
- RoHS :
- Details
- Turn-Off Delay Time :
- 120 ns
- Series :
- HiPerFET™
- Power Dissipation :
- 500W
- Product Type :
- Discrete Semiconductor Modules
- Height :
- 9.65 mm
- Packaging :
- Tube
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 40 C
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 47A
- Additional Feature :
- AVALANCHE RATED
- Fall Time (Typ) :
- 45 ns
- Published :
- 2003
- Mounting Type :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Tradename :
- HyperFET
- Drain-source On Resistance-Max :
- 0.09Ohm
- Width :
- 25.42 mm
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Brand :
- IXYS
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 27.5A, 10V
- Product Category :
- Discrete Semiconductor Modules
- Rise Time :
- 60ns
- Terminal Position :
- UPPER
- Product Status :
- Obsolete
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Package :
- Tube
- Mounting Style :
- Chassis Mount
- RoHS Status :
- RoHS Compliant
- Mount :
- Chassis Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Terminal Form :
- UNSPECIFIED
- JESD-30 Code :
- R-PUFM-X4
- DS Breakdown Voltage-Min :
- 500 V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 200A
- Operating Temperature :
- -40°C~150°C TJ
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation-Max :
- 500W Tc
- FET Feature :
- --
- Package / Case :
- SOT-227-4, miniBLOC
- Number of Terminals :
- 4
- Power Dissipation-Max (Abs) :
- 500 W
- Power Dissipation (Max) :
- 500W (Tc)
- Number of Terminations :
- 4
- Supplier Device Package :
- SOT-227B
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 4
- Current - Continuous Drain (Id) @ 25°C :
- 47A Tc
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Polarity :
- N-Channel
- Surface Mount :
- No
- Product :
- Power MOSFET Modules
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Datasheets
- IXFE55N50

N-Channel Tube 90m Ω @ 27.5A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V SOT-227-4, miniBLOC
IXFE55N50 Overview
A device's maximum input capacitance is 9400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 47A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 47 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFE55N50 Features
a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)
IXFE55N50 Applications
There are a lot of IXYS
IXFE55N50 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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