IXFE55N50

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Mfr.Part #
IXFE55N50
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 47A SOT-227B
Stock
40,572
In Stock :
40,572

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
38.23 mm
Height :
9.65 mm
Base Product Number :
IXFE55
Power Dissipation :
500W
Package :
Tube
Transistor Polarity :
N-Channel
RoHS Status :
RoHS Compliant
Supplier Device Package :
SOT-227B
Additional Feature :
AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Drain to Source Voltage (Vdss) :
500V
Maximum Operating Temperature :
+ 150 C
Power Dissipation (Max) :
500W (Tc)
Surface Mount :
No
Package / Case :
SOT-227-4, miniBLOC
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
90m Ω @ 27.5A, 10V
Operating Temperature :
-40°C~150°C TJ
Product Status :
Obsolete
Vgs (Max) :
±20V
Fall Time (Typ) :
45 ns
Case Connection :
Isolated
Product Type :
Discrete Semiconductor Modules
Polarity/Channel Type :
N-Channel
Mounting Style :
Chassis Mount
Drain Current-Max (Abs) (ID) :
47 A
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
500V
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Drain-source On Resistance-Max :
0.09Ohm
FET Type :
N-Channel
Terminal Form :
UNSPECIFIED
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Tradename :
HyperFET
Terminal Position :
UPPER
Number of Elements :
1
DS Breakdown Voltage-Min :
500 V
JESD-30 Code :
R-PUFM-X4
Configuration :
SINGLE WITH BUILT-IN DIODE
Published :
2003
Package Shape :
RECTANGULAR
Product :
Power MOSFET Modules
Pulsed Drain Current-Max (IDM) :
200A
Continuous Drain Current (ID) :
47A
Number of Pins :
4
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
Packaging :
Tube
Number of Terminals :
4
Rise Time :
60ns
Pbfree Code :
yes
Turn-Off Delay Time :
120 ns
Product Category :
Discrete Semiconductor Modules
Qualification Status :
Not Qualified
Brand :
IXYS
Series :
HiPerFET™
Mounting Type :
Chassis Mount
Power Dissipation-Max :
500W Tc
Number of Channels :
1 Channel
Number of Terminations :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
47A Tc
Width :
25.42 mm
Transistor Element Material :
SILICON
Minimum Operating Temperature :
- 40 C
Manufacturer :
IXYS
Power Dissipation-Max (Abs) :
500 W
Mount :
Chassis Mount
Pin Count :
4
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Feature :
--
RoHS :
Details
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE55N50 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-40°C~150°C TJ, Number of Pins:4, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Number of Terminations:4, IXFE55N50 pinout, IXFE55N50 datasheet PDF, IXFE55N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE55N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE55N50


N-Channel Tube 90m Ω @ 27.5A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V SOT-227-4, miniBLOC

IXFE55N50 Overview


A device's maximum input capacitance is 9400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 47A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 47 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFE55N50 Features


a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)


IXFE55N50 Applications


There are a lot of IXYS
IXFE55N50 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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