IXFE55N50

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Mfr.Part #
IXFE55N50
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 47A SOT-227B
Stock
40,572
In Stock :
40,572

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
IXFE55
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain Current-Max (Abs) (ID) :
47 A
Drain to Source Voltage (Vdss) :
500V
Qualification Status :
Not Qualified
Manufacturer :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
38.23 mm
RoHS :
Details
Turn-Off Delay Time :
120 ns
Series :
HiPerFET™
Power Dissipation :
500W
Product Type :
Discrete Semiconductor Modules
Height :
9.65 mm
Packaging :
Tube
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 40 C
Number of Pins :
4
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Continuous Drain Current (ID) :
47A
Additional Feature :
AVALANCHE RATED
Fall Time (Typ) :
45 ns
Published :
2003
Mounting Type :
Chassis Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Tradename :
HyperFET
Drain-source On Resistance-Max :
0.09Ohm
Width :
25.42 mm
Number of Elements :
1
Pbfree Code :
yes
Brand :
IXYS
Rds On (Max) @ Id, Vgs :
90m Ω @ 27.5A, 10V
Product Category :
Discrete Semiconductor Modules
Rise Time :
60ns
Terminal Position :
UPPER
Product Status :
Obsolete
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Package :
Tube
Mounting Style :
Chassis Mount
RoHS Status :
RoHS Compliant
Mount :
Chassis Mount
Gate Charge (Qg) (Max) @ Vgs :
330nC @ 10V
Terminal Form :
UNSPECIFIED
JESD-30 Code :
R-PUFM-X4
DS Breakdown Voltage-Min :
500 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
200A
Operating Temperature :
-40°C~150°C TJ
Transistor Application :
SWITCHING
Case Connection :
Isolated
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
500V
Power Dissipation-Max :
500W Tc
FET Feature :
--
Package / Case :
SOT-227-4, miniBLOC
Number of Terminals :
4
Power Dissipation-Max (Abs) :
500 W
Power Dissipation (Max) :
500W (Tc)
Number of Terminations :
4
Supplier Device Package :
SOT-227B
Gate to Source Voltage (Vgs) :
20V
Pin Count :
4
Current - Continuous Drain (Id) @ 25°C :
47A Tc
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Polarity :
N-Channel
Surface Mount :
No
Product :
Power MOSFET Modules
Input Capacitance (Ciss) (Max) @ Vds :
9400pF @ 25V
Datasheets
IXFE55N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFE55N50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Number of Channels:1 Channel, Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C TJ, Package / Case:SOT-227-4, miniBLOC, Number of Terminations:4, IXFE55N50 pinout, IXFE55N50 datasheet PDF, IXFE55N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFE55N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFE55N50


N-Channel Tube 90m Ω @ 27.5A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V SOT-227-4, miniBLOC

IXFE55N50 Overview


A device's maximum input capacitance is 9400pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 47A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 47 A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Its maximum pulsed drain current is 200A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFE55N50 Features


a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)


IXFE55N50 Applications


There are a lot of IXYS
IXFE55N50 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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