IXFC30N60P
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- Mfr.Part #
- IXFC30N60P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS220™
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 15A ISOPLUS220
- Stock
- 29,986
- In Stock ：
- 29,986
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Series :
- HiPerFET™, PolarHT™
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- Package :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Published :
- 2006
- Drain-source On Resistance-Max :
- 0.25Ohm
- Base Product Number :
- IXFC30N60
- Pulsed Drain Current-Max (IDM) :
- 80A
- Operating Temperature :
- -55°C~150°C TJ
- Product Status :
- Obsolete
- Terminal Position :
- Single
- Supplier Device Package :
- ISOPLUS220™
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- DS Breakdown Voltage-Min :
- 600 V
- Vgs (Max) :
- ±30V
- Polarity/Channel Type :
- N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs(th) (Max) @ Id :
- 5V @ 4mA
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 600V
- Fall Time (Typ) :
- 25 ns
- Power Dissipation (Max) :
- 166W (Tc)
- Turn-Off Delay Time :
- 75 ns
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 166W Tc
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS Corporation
- JESD-30 Code :
- R-PSIP-T3
- Reach Compliance Code :
- Compliant
- Number of Elements :
- 1
- Packaging :
- Tube
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 85nC @ 10V
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e1
- FET Feature :
- --
- Number of Terminals :
- 3
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Drain to Source Breakdown Voltage :
- 600V
- Mounting Type :
- Through Hole
- Rise Time :
- 20ns
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 15A
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Power Dissipation :
- 166W
- Input Capacitance (Ciss) (Max) @ Vds :
- 3820pF @ 25V
- Surface Mount :
- No
- Voltage - Rated DC :
- 600V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current Rating :
- 30A
- Mount :
- Through Hole
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Package / Case :
- ISOPLUS220™
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 15A, 10V
- Datasheets
- IXFC30N60P
N-Channel Tube 250m Ω @ 15A, 10V ±30V 3820pF @ 25V 85nC @ 10V 600V ISOPLUS220™
IXFC30N60P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 1500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3820pF @ 25V.This device conducts a continuous drain current (ID) of 15A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600 V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFC30N60P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)
IXFC30N60P Applications
There are a lot of IXYS
IXFC30N60P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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