ISC0804NLSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

PG-TDSON-8

Drain to Source Voltage (Vdss) :

100 V

Package Type :

SuperSO8 5 x 6

Product Category :

MOSFET

Channel Type :

N Channel

Manufacturer :

Infineon

Gate Charge (Qg) (Max) @ Vgs :

24 nC @ 10 V

Power Dissipation (Max) :

2.5W (Ta), 60W (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Channel Mode :

Enhancement

Base Product Number :

ISC0804N

Package / Case :

8-PowerTDFN

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1600 pF @ 50 V

Mounting Type :

Surface Mount

Power Dissipation :

60

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

10.9mOhm @ 20A, 10V

Pin Count :

8

Mounting Style :

SMD/SMT

FET Feature :

-

Maximum Operating Temperature :

+ 150 C

Qualification :

-

Subcategory :

MOSFETs

Package :

Digi-Reel?

Number of Channels :

1 Channel

Vgs (Max) :

±20V

Number of Elements per Chip :

1

Brand :

Infineon Technologies

Packaging :

Cut Tape

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

2.3V @ 28μA

Operating Temperature :

-55°C ~ 150°C (TJ)

Product Status :

Active

Series :

OptiMOS? 5

Current - Continuous Drain (Id) @ 25°C :

12A (Ta), 59A (Tc)

Continuous Drain Current Id :

59

Product Type :

MOSFET