ISC0802NLSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerTDFN

Drain to Source Voltage (Vdss) :

100 V

FET Feature :

-

Rds On (Max) @ Id, Vgs :

3.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id :

2.3V @ 92μA

Number of Channels :

1 Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

22A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Channel Mode :

Enhancement

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Number of Elements per Chip :

1

Package Type :

SuperSO8 5 x 6

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

73 nC @ 10 V

Package :

Digi-Reel?

Maximum Operating Temperature :

+ 150 C

Base Product Number :

ISC0802N

Series :

OptiMOS? 5

Pin Count :

8

Channel Type :

N

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5190 pF @ 50 V

Power Dissipation (Max) :

2.5W (Ta), 125W (Tc)

Power Dissipation :

125

Vgs (Max) :

±20V

Continuous Drain Current Id :

150

Minimum Operating Temperature :

- 55 C

Supplier Device Package :

PG-TDSON-8-7

Qualification :

-