IS61VPD51236A-200B3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Power Supplies :

2.5V

ECCN Code :

3A991.B.2.A

Output Characteristics :

3-STATE

Memory Format :

SRAM

Package / Case :

165-TBGA

Access Time :

3.1ns

Standby Current-Max :

0.06A

Pbfree Code :

No

Height Seated (Max) :

1.2mm

Number of Terminations :

165

Memory Type :

Volatile

I/O Type :

COMMON

Supply Current-Max :

0.425mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

165

Terminal Position :

BOTTOM

Voltage - Supply :

2.375V~2.625V

Width :

13mm

Memory Interface :

Parallel

Number of Functions :

1

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Additional Feature :

PIPELINED ARCHITECTURE

Memory Width :

36

Terminal Pitch :

1mm

JESD-609 Code :

e0

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8542.32.00.41

Memory Size :

18Mb 512K x 36

Supply Voltage :

2.5V

Operating Temperature :

0°C~70°C TA

Standby Voltage-Min :

2.38V

Clock Frequency :

200MHz

Organization :

512KX36

Number of Pins :

165

Packaging :

Tray

Supply Voltage-Max (Vsup) :

2.625V

Surface Mount :

yes

Memory Density :

18874368 bit

Length :

15mm

RoHS Status :

ROHS3 Compliant

Supply Voltage-Min (Vsup) :

2.375V