IS61VPD102418A-200B3I

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

I/O Type :

COMMON

Memory Interface :

Parallel

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

1mm

Supply Current-Max :

0.475mA

JESD-609 Code :

e0

Pbfree Code :

No

Mounting Type :

Surface Mount

Standby Voltage-Min :

2.38V

Voltage - Supply :

2.375V~2.625V

Qualification Status :

Not Qualified

Supply Voltage :

2.5V

Number of Terminations :

165

Memory Format :

SRAM

Power Supplies :

2.5V

Supply Voltage-Min (Vsup) :

2.375V

Memory Width :

18

Additional Feature :

PIPELINED ARCHITECTURE

Packaging :

Tray

HTS Code :

8542.32.00.41

Length :

15mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Density :

18874368 bit

Package / Case :

165-TBGA

Surface Mount :

yes

Memory Size :

18Mb 1M x 18

Operating Temperature :

-40°C~85°C TA

Standby Current-Max :

0.075A

Width :

13mm

Height Seated (Max) :

1.2mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Functions :

1

Clock Frequency :

200MHz

Supply Voltage-Max (Vsup) :

2.625V

Output Characteristics :

3-STATE

Pin Count :

165

Terminal Finish :

Tin/Lead (Sn/Pb)

Organization :

1MX18

Memory Type :

Volatile

Access Time :

3.1ns

Number of Pins :

165

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

3A991.B.2.A